transistor(pnp) features z low v ce(sat) .v ce(sat) <-0.5v(i c / i b = -0.5a /-50ma) z i c =-0.8a. z complements the 2sd1781. maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector- base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.8 a p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e = -50 a, i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb = -4v,i c =0 -0.5 a dc current gain h fe v ce =-3v,i c = -100ma 82 390 collector-emitter saturation voltage v ce (sat) i c =-500 ma, i b = -50ma -0.5 v transition frequency f t v ce =-5v, i c = -50ma, f=100mhz 50 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 12 30 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking ahp ahq ahr unit : mm so t -23 1. base 2. emitter 3. collector 2sb1 1 97 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2SB1197 2sb1 1 97 2 date:2011/05 www.htsemi.com semiconductor jinyu
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